publication date : oct 2011 1 < silicon rf power mos fet ( discrete ) > rd 100hhf1 rohs compliance, silicon mosfet power transistor 30mhz,100w description RD100HHF1 is a mos fet type transistor specifically designed for hf high power amplifiers applications. features high power and high gain: pout> 100 w, gp> 11.5 db @vdd=12.5v,f= 30 mhz high efficiency: 60 %typ. on hf band application for output stage of high power amplifiers in hf band mobile radio sets. rohs compliant rd 100hh f1 - 101 is a rohs complian t products. rohs compliance is indicate by the letter ?g? after the lot marking . absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit v dss drain to source voltage vgs=0v 5 0 v v gss gate to source voltage vds=0v +/ - 20 v pch channel dissipation tc=25 c 176.5 w pin input power zg=zl=50 ? 12.5 w id drain current - 25 a t ch channel temperature - 175 c tstg storage temperature - - 40 to +1 75 c rth j - c thermal resistance junction to case 0.8 5 c/w note 1: above parameters are guaranteed independently. outline drawing 9 . 6 + / - 0 . 3 3 . 3 + / - 0 . 2 4-c2 1 0 . 0 + / - 0 . 3 r1.6+/-0.15 2 4 . 0 + / - 0 . 6 18.5+/-0.3 5.0+/-0.3 3 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 2 4.5+/-0.7 6.2+/-0.7 0.1 +0.05 -0.01 pin 1.drain 2.source 3.gate unit:mm
< silicon rf power mos fet ( discrete ) > RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w publication date : oct 2011 2 electrical characteristics (tc=25 c unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zerogate voltage drain current v ds =17v, v gs =0v - - 10 u a i gss gat e to source leak current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold v oltage v ds =1 2 v, i ds =1ma 1.5 - 4.5 v pout output power f = 30 mhz , v d d = 12.5 v 100 110 - w ? d drain efficiency pin= 7w, idq=1.0a 55 60 - % load vswr tolerance v dd =15.2v,po=100w(pin contro l) f=30mhz,idq=1.0a,zg=50 ? load vswr=20:1(all phase) no destroy - note : above parameters , ratings , limits and conditions are subject to change.
< silicon rf power mos fet ( discrete ) > RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w publication date : oct 2011 3 typical characteristics channel dissipation vs. ambient temperature 0 40 80 120 160 200 0 40 80 120 160 200 ambient temperature ta ( c ) c h a n n e l d i s s i p a t i o n p c h ( w ) . . . vds vs. crss characteristics 0 10 20 30 40 0 10 20 30 vds(v) c r s s ( p f ) ta =+ 25 c f=1mhz vds vs. coss characteristics 0 100 200 300 400 500 0 10 20 30 vds(v) c o s s ( p f ) ta =+ 25 c f=1mhz vds vs. ciss characteristics 0 50 100 150 200 250 300 0 10 20 30 vds(v) c i s s ( p f ) ta =+ 25 c f=1mhz vds-ids characteristics 0 2 4 6 8 10 0 2 4 6 8 10 vds(v) i d s ( a ) ta =+ 25 c vgs=5.7v vgs=5.4v vgs=5.1v vgs=4.8v vgs=4.2v vgs=6v vgs=4.5v vgs-ids characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 7 vgs(v) i d s ( a ) ta =+ 25 c vds=10v
< silicon rf power mos fet ( discrete ) > RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w publication date : oct 2011 4 typical characteristics pin-po characteristics 0 10 20 30 40 50 0 10 20 30 40 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=30mhz vdd=12.5v idq=1a po gp pin-po characteristics 0 20 40 60 80 100 120 0 2 4 6 8 10 pin(w) p o u t ( w ) , i d d ( a ) 20 30 40 50 60 70 80 d ( % ) po d idd ta=25c f=30mhz vdd=12.5v idq=1a vdd-po characteristics 0 20 40 60 80 100 120 140 4 6 8 10 12 14 vdd(v) p o ( w ) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 i d d ( a ) po idd ta=25c f=30mhz pin=7w idq=1a zg=zi=50 ohm vgs-ids characteristics 2 0 2 4 6 8 10 0 1 2 3 4 5 6 7 vgs(v) i d s ( a ) vds=10v tc=-25~+75c -25c +75c +25c
< silicon rf power mos fet ( discrete ) > RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w publication date : oct 2011 5 test circuit(f=30mhz) 5mm 1000pf 220pf pin 4.7k ohm c1 c1 3 3 0 f , 5 0 v 9.1k ohm l1 1000pf pout vgg vdd c1 1 0 0 p f , 0 . 0 2 2 f , 0 . 1 f i n p a r a l l e l dimensions:mm note:board material ptfe substrate micro strip line width=4.2mm/50 c1 220pf 20pf 20pf 4.7 ohm 19 30 68 75 90 93 100 4.5 18 21 24 43 50 53 180pf 200pf 180pf 200pf 82pf 82pf 82pf 82pf c1 1 0 f , 5 0 v 82pf 330pf 82pf 82pf 330pf 82pf 56 93 100 12 8 14 l1: 8 turns,i.d8mm,d1.6mm silver plateted copper wire l2: 10 turns,i.d8mm,d1.6mm silver plateted copper wire l3: 5 turns,i.d6mm,d0.7mm copper wire p=1mm l4: 1 turns,i.d10mm,d1.6mm silver plateted copper wire l3 l4 l2
< silicon rf power mos fet ( discrete ) > RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w publication date : oct 2011 6 i nput/output impedance vs.frequency characteristics zin , zout f zin zout (mhz) (ohm) (ohm) conditions 30 8.86 - j14.31 0.64 - j0.01 po= 115 w, vdd=12.5v,pin= 7 w f=30mhz zout f=30mhz zin zo=10 ?
< silicon rf power mos fet ( discrete ) > RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w publication date : oct 2011 7 RD100HHF1 s-parameter data (@vdd=12.5v, id=800ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 10 0.835 -158.6 31.451 94.8 0.014 5.2 0.770 -162.1 30 0.839 -171.1 10.628 79.3 0.014 -9.9 0.764 -171.6 50 0.849 -172.9 6.212 71.0 0.012 -20.7 0.786 -171.4 100 0.886 -173.9 2.749 54.1 0.012 -34.1 0.842 -171.4 150 0.915 -175.1 1.541 40.2 0.009 -27.8 0.880 -173.6 200 0.932 -176.4 0.972 31.6 0.007 -36.9 0.908 -174.3 250 0.945 -177.3 0.671 24.5 0.006 -54.4 0.946 -176.2 300 0.951 -178.2 0.481 20.1 0.005 -30.4 0.941 -177.4 350 0.958 -179.3 0.365 15.2 0.003 13.1 0.952 -178.3 400 0.960 -179.8 0.291 13.4 0.003 -18.0 0.974 -179.8 450 0.964 179.5 0.243 8.5 0.004 45.3 0.963 179.6 500 0.966 178.7 0.195 6.8 0.003 42.3 0.971 178.6 550 0.970 178.2 0.154 5.2 0.004 78.6 0.975 177.5 600 0.967 177.5 0.133 4.8 0.005 80.1 0.965 176.8 650 0.971 177.0 0.119 1.0 0.003 72.0 0.972 176.0 700 0.970 176.5 0.109 -1.3 0.006 61.3 0.973 175.1 750 0.969 175.6 0.092 0.6 0.007 67.2 0.964 174.9 800 0.970 175.2 0.080 -4.0 0.005 82.2 0.974 173.9 850 0.976 174.5 0.073 -1.9 0.007 78.7 0.969 173.3 900 0.973 173.9 0.067 -5.4 0.008 69.9 0.973 172.6 950 0.973 173.2 0.058 4.1 0.008 86.8 0.973 171.5 1000 0.977 172.6 0.049 -8.7 0.011 78.7 0.971 171.7 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w publication date : oct 2011 8 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > RD100HHF1 rohs compliance, silicon mosfet power transistor 30mhz,100w publication date : oct 2011 9 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give du e consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any licen se under any intellectual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originati ng in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms repres ents information on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubi shi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including t he mitsubishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all informati on as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mi tsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsub ishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? plea se contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
|
